fdp16n50u / FDPF16N50UT n-channel unifet tm ultra frfet tm mosfet ?2009 fairchild semiconductor corporation fdp16n50u / FDPF16N50UT rev. c0 www.fairchildsemi.com 1 fdp16n50u / FDPF16N50UT n-channel unifet tm ultra frfet tm mosfet 500 v , 15 a, 480 m? features ? r ds(on) = 370 m? ( typ.) @ v gs = 10 v, i d = 7.5 a ? low gate charge (typ. 32 nc) ? low c rss (typ. 20 pf) ? 100% avalanche tested ? improved dv/dt capability ? rohs compliant description unifet tm mosfet is fairchild semiconduc tor ? s high voltage mosfet family based on planar stripe and dmos technology. this mosfet is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. unifet ultra frfet tm mosfet has much superior body diode reverse recovery performance. its t rr is less than 50ns ec and the revers e dv/dt immunity is 20v/nsec while normal planar mosfets have over 200nsec and 4.5v/ nsec respectiv ely. therefore unifet ultra frfet mosfet can remove additional component and improve system reliability in certain applications that require performanc e improvement of the mosfets body diode. this device family is suitable for switching power converter applications such as power factor correction (pfc), flat panel display (fpd) tv power, atx and electronic lamp ballasts. to-220 to-220f d g s mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter fdp16n50u FDPF16N50UT unit v dss drain to source voltage 500 v v gss gate to source voltage 30 v i d drain current -continuous (t c = 25 o c) 15 15* a -continuous (t c = 100 o c) 9 9* i dm drain current - pulsed (note 1) 60 60* a e as single pulsed avalanche energy (note 2) 610 mj i ar avalanche current (note 1) 15 a e ar repetitive avalanche energy (note 1) 20 mj dv/dt peak diode recovery dv/dt (note 3) 20 v/ns p d power dissipation (t c = 25 o c) 200 38.5 w - derate above 25 o c 1.59 0.3 w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter fdp16n50u FDPF16N50UT unit r ? jc thermal resistance, junction to cas e, max. 0.63 3.3 o c/w r ? cs thermal resistance, junction to ambient, typ. 0.5 - r ? ja thermal resistance, junction to ambient, max. 62.5 62.5 *drain current limited by maximum junction temperature applications ? lcd/led/pdp tv ? lighting ? uninterruptible power supply april 2013 g d s g d s
2 package marking and ordering information t c = 25 o c unless otherwise noted electrical characteristics off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e chara cteristics device marking device package reel size tape width quantity fdp16n50u fdp16n50u to-220 - - 50 FDPF16N50UT FDPF16N50UT to-220f - - 50 symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage i d = 250 ? a, v gs = 0v, t j = 25 o c 500 - - v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 ? a, referenced to 25 o c-0.5-v/ o c i dss zero gate voltage drain current v ds = 500v, v gs = 0v - - 25 ? a v ds = 400v, t c = 125 o c - - 250 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 ? a3 . 0-5 . 0v r ds(on) static drain to source on resistance v gs = 10v, i d = 7.5a - 0.37 0.48 ? g fs forward transconductance v ds = 40v, i d = 7.5a (note 4) -23-s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 1495 1945 pf c oss output capacitance - 235 310 pf c rss reverse transfer capacitance - 20 30 pf q g(tot) total gate charge at 10v v ds = 400v, i d = 15a v gs = 10v (note 4, 5) -3245nc q gs gate to source gate charge - 8.5 - nc q gd gate to drain ?miller? charge - 14 - nc t d(on) turn-on delay time v dd = 250v, i d = 15a r g = 25 ? (note 4, 5) -4090ns t r turn-on rise time - 150 310 ns t d(off) turn-off delay time - 65 140 ns t f turn-off fall time - 80 170 ns i s maximum continuous drain to source diode forward current - - 15 a i sm maximum pulsed drain to source diode forward current - - 60 a v sd drain to source diode forward voltage v gs = 0v, i sd = 15a - - 1.6 v t rr reverse recovery time v gs = 0v, i sd = 15a di f /dt = 100a/ ? s (note 4) -65-ns q rr reverse recovery charge - 0.1 - ? c notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l = 5.5mh, i as = 15a, v dd = 50v, r g = 25 ? , starting t j = 25 ?c 3. i sd ?? 16a, di/dt ? 200a/ ? s, v dd ? bv dss , starting t j = 25 ?c 4. pulse test: pulse width ? 300 ? s, duty cycle ? 2% 5. essentially independent of operating temperature typical characteristics fdp16n50u / FDPF16N50UT n-channel unifet tm ultra frfet tm mosfet ?2009 fairchild semiconductor corporation fdp16n50u / FDPF16N50UT rev. c0 www.fairchildsemi.com
3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 10 -1 10 0 10 1 10 -1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v * notes : 1. 250 ? s pulse test 2 . t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 24681 01 2 10 0 10 1 150 o c 25 o c * notes : 1 . v ds = 40v 2 . 250 ? s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0 5 10 15 20 25 30 35 40 0.2 0.3 0.4 0.5 0.6 v gs = 20v v gs = 10v * note : t j = 25 o c r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 10 0 10 1 150 o c * notes : 1 . v gs = 0v 2. 250 ? s pulse test 25 o c i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 1000 2000 3000 4000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 0 1 02 03 04 0 0 2 4 6 8 10 12 v ds = 250v v ds = 100v v ds = 400v * note : i d = 15a v gs , gate-source voltage [v] q ttlgt ch [c] fdp16n50u / FDPF16N50UT n-channel unifet tm ultra frfet tm mosfet ?2009 fairchild semiconductor corporation fdp16n50u / FDPF16N50UT rev. c0 www.fairchildsemi.com
4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. maximum safe operating area vs. temperature - FDPF16N50UT figure 9. maximum drain current vs. case temperature - FDPF16N50UT figure 10. transient thermal response curve - FDPF16N50UT -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1 . v gs = 0 v 2 . i d = 250 ? a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 100 ms 1 ms 10 ? s dc 10 ms 100 ? s operation in this area is limited by r ds( on) * notes : 1 . t c = 25 o c 2 . t j = 150 o c 3 . single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 5 10 15 i d , drain current [a] t c , case temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1 . z ? jc (t) = 3.3 o c/w max. 2 . duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z ? jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z ? jc (t), thermal response t square wave pulse duration [sec] t 1 p dm t 2 fdp16n50u / FDPF16N50UT n-channel unifet tm ultra frfet tm mosfet ?2009 fairchild semiconductor corporation fdp16n50u / FDPF16N50UT rev. c0 www.fairchildsemi.com
5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms fdp16n50u / FDPF16N50UT n-channel unifet tm ultra frfet tm mosfet ?2009 fairchild semiconductor corporation fdp16n50u / FDPF16N50UT rev. c0 www.fairchildsemi.com
6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( d r iv e r ) i sd ( d u t ) v ds ( dut ) v dd body diode forw ard v oltage d rop v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = gate pulse w idth g ate pulse period -------------------------- dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( d r iv e r ) i sd ( d u t ) v ds ( dut ) v dd body diode forw ard v oltage d rop v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = gate pulse w idth g ate pulse period -------------------------- d = gate pulse w idth g ate pulse period -------------------------- fdp16n50u / FDPF16N50UT n-channel unifet tm ultra frfet tm mosfet ?2009 fairchild semiconductor corporation fdp16n50u / FDPF16N50UT rev. c0 www.fairchildsemi.com
dimensions in millimeters mechanical dimensions to-220b03 fdp16n50u / FDPF16N50UT n-channel unifet tm ultra frfet tm 7 c0
mechanical dimensions dimensions in millimeters to-220m03 fdp16n50u / FDPF16N50UT n-channel unifet tm ultra frfet tm c0
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fdp16n50u / FDPF16N50UT n-channel unifet tm ultra frfet tm 9 c0
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